R&D for Semiconductor
µð¿£¿¡ÇÁ´Â ±Þº¯ÇÏ´Â ¹ÝµµÃ¼¿ë ÈÇмÒÀç ½ÃÀå¿¡ ÀûÀýÈ÷ ´ëÀÀÇϱâ À§ÇØ ´Ù¼öÀÇ Àü¹®ÀηÂÀ¸·Î ±¸¼ºµÈ ¿¬±¸Á¶Á÷À» ¿î¿µÇÏ°í ÀÖÀ¸¸ç,
¹ÝµµÃ¼ Á¦Á¶»ç ¹× Àåºñȸ»ç¿ÍÀÇ °øµ¿°³¹ß, µ¶ÀÚÀû ±â¼ú º¸À¯ µîÀ» ÅëÇØ Àç·áÀÇ ±¹»êÈ, ¼öÃâÁõ´ë, ±¹³»¿Ü ¹ÝµµÃ¼ »ê¾÷ ¹ß´Þ¿¡ ±â¿©Çϱâ À§ÇØ ³ë·ÂÇÏ°í ÀÖ½À´Ï´Ù.
¹ÝµµÃ¼ Àç·á°³¹ß Æ÷Æ®Æú¸®¿À (ÆǸŠ¹× °³¹ß¿Ï·á, °³¹ßÁß)
Wire |
Alpis-3 |
MABOC (Ep-Cu Seed¿ë) |
CVD/ALD¿ë Cu Precursor |
Electrode |
TiCl4 / TEMAT / TDMAT / Ru Precursor |
High-k |
TEMAHf / TEMAZr |
Zr Precursor |
STO/BST/Zr Precursor |
Low-k |
|
Low-k (CVD)¿ë Precursor |
Gap-Fill |
Polysilazane |
Flowable Oxide¿ë Precursor |
Diffusion Barrier |
TiCl4 |
TDMATi / Ta Precursor |
Ru Precursor |
Etch Hardmask |
SiN |
1-Hexene/Propylene (ACL¿ë) |
SOC¿ë Precursor |
Low Temp. Silicon (DPT) |
|
DIPAS |
ALD¿ë SiO2 |
New Memory |
Ge / Sb / Te / Fe / Co / Ni Precursor |
Gate Metal |
(CVD¿ë) Ni / Co / W Precursor |
ALD¿ë Metal |
TSV |
ALD¿ë SiO2 / Ti Precursor / Ta Precursor / CVD¿ë Cu |
|
50nm |
40nm |
30nm |
20nm |
10nm~ |
* CVD : Chemical Vapor Deposition ÈÇбâ»óÁõÂø
* ALD : Atomic Layer Deposition ¿øÀÚÃþÁõÂø
* Ep : Electroplating Àü±âµµ±Ý
* SOC : Spin on Carbon
* ACL : Amorphous Carbon Layer ºñÁ¤Áú ź¼Ò ¹Ú¸·
* DPT : Double Patterning Technology
* TSV : Through Silicon Via ½Ç¸®ÄÜ °üÅë Àü±Ø
R&D for Display
½º¸¶Æ®Æù°ú ÅÂºí¸´ PC µîÀÇ ¼ö¿ä Áõ°¡¿Í Flexible ÆгΠ°³¹ß¿¡ µû¶ó µð½ºÇ÷¹ÀÌ ¼ÒÀç¿¡ ´ëÇÑ °ü½ÉÀÌ ±ÞÁõÇÏ°í ÀÖ½À´Ï´Ù.
µð¿£¿¡ÇÁ´Â TFT ±âÆÇÀÇ Gate Insulator¿Í °ø±â ÁßÀÇ »ê¼Ò ¹× ¼öºÐ¿¡ ³ëÃâµÇ´Â °ÍÀ» ¹æÁöÇϱâ À§ÇØ »ç¿ëÇÏ´Â ºÀÁö°øÁ¤(Encapsulation)¿¡ »ç¿ëÇÒ ¼ÒÀç °³¹ßÀ» ÁøÇàÁßÀÔ´Ï´Ù.
R&D for Nano Tech.
µð¿£¿¡ÇÁ´Â ¹ÝµµÃ¼¿ë À¯¹«±âÈÇÕ¹°, µð½ºÇ÷¹ÀÌ ¼ÒÀç, Ã˸Š°³¹ß µîÀÇ °æÇèÀ» ¹ÙÅÁÀ¸·Î ´Ù¾çÇÑ ³ª³ë¼ÒÀ縦 ¿¬±¸ÇÏ°í ÀÖ½À´Ï´Ù.
Áö¼ÓÀûÀÎ ¼ö¿ä Áõ°¡°¡ ¿¹»óµÇ´Â °í±â´É¼º ÄÚÆÃÁ¦ ¹× ±ÕÀÏ ³ª³ë ÀÔÀÚ, ±Í±Ý¼Ó º¹ÇÕÃ˸ŠµîÀÇ ½Å±Ô ¾ÆÀÌÅÛÀ» °³¹ßÇÏ°í ÀÖÀ¸¸ç,
Á¾ÇÕÈÇмÒÀç Àü¹®±â¾÷À¸·Î ¼ºÀåÇϱâ À§ÇÑ ±â¹ÝÀ» ±¸ÃàÇÏ°í ÀÖ½À´Ï´Ù.