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R&D for Semiconductor

µð¿£¿¡ÇÁ´Â ±Þº¯ÇÏ´Â ¹ÝµµÃ¼¿ë È­ÇмÒÀç ½ÃÀå¿¡ ÀûÀýÈ÷ ´ëÀÀÇϱâ À§ÇØ ´Ù¼öÀÇ Àü¹®ÀηÂÀ¸·Î ±¸¼ºµÈ ¿¬±¸Á¶Á÷À» ¿î¿µÇÏ°í ÀÖÀ¸¸ç, ¹ÝµµÃ¼ Á¦Á¶»ç ¹× Àåºñȸ»ç¿ÍÀÇ °øµ¿°³¹ß, µ¶ÀÚÀû ±â¼ú º¸À¯ µîÀ» ÅëÇØ Àç·áÀÇ ±¹»êÈ­, ¼öÃâÁõ´ë, ±¹³»¿Ü ¹ÝµµÃ¼ »ê¾÷ ¹ß´Þ¿¡ ±â¿©Çϱâ À§ÇØ ³ë·ÂÇÏ°í ÀÖ½À´Ï´Ù.

¹ÝµµÃ¼ Àç·á°³¹ß Æ÷Æ®Æú¸®¿À (ÆǸŠ¹× °³¹ß¿Ï·á, °³¹ßÁß)

Wire Alpis-3 MABOC (Ep-Cu Seed¿ë) CVD/ALD¿ë Cu Precursor
Electrode TiCl4 / TEMAT / TDMAT / Ru Precursor
High-k TEMAHf / TEMAZr Zr Precursor STO/BST/Zr Precursor
Low-k   Low-k (CVD)¿ë Precursor
Gap-Fill Polysilazane Flowable Oxide¿ë Precursor
Diffusion Barrier TiCl4 TDMATi / Ta Precursor Ru Precursor
Etch Hardmask SiN 1-Hexene/Propylene (ACL¿ë) SOC¿ë Precursor
Low Temp. Silicon (DPT)   DIPAS ALD¿ë SiO2
New Memory Ge / Sb / Te / Fe / Co / Ni Precursor
Gate Metal (CVD¿ë) Ni / Co / W Precursor ALD¿ë Metal
TSV ALD¿ë SiO2 / Ti Precursor / Ta Precursor / CVD¿ë Cu
  50nm 40nm 30nm 20nm 10nm~

* CVD : Chemical Vapor Deposition È­Çбâ»óÁõÂø * ALD : Atomic Layer Deposition ¿øÀÚÃþÁõÂø
* Ep : Electroplating Àü±âµµ±Ý * SOC : Spin on Carbon * ACL : Amorphous Carbon Layer ºñÁ¤Áú ź¼Ò ¹Ú¸·
* DPT : Double Patterning Technology * TSV : Through Silicon Via ½Ç¸®ÄÜ °üÅë Àü±Ø

R&D for Display

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R&D for Display

R&D for Nano Tech.

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