Barrier Metal

Barrier metal is required for preventing the migration of metal ion and O₂ into dielectric regions during metallization, so it is called diffusion barrier materials. It is increasingly important to semiconductor device scaling because metallization metals such as Al and Cu easily react with dielectric materials, and it causes semiconductor device to lose reliability.

Product	Structure	Property		MSDS
Ru(EtCp)2		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C14H18Ru : 287.37g/mol : 6¡É : 90¡É/0.34torr : Liquid (Yellow) : React slowly
Ru-4		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C16H22Ru : 315.23g/mol : - : 134¡É/1.0torr : Liquid (Yellow) : React slowly
TDMATi		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C8H24N4Ti : 224.18g/mol : 225¡É : 25¡É/0.1torr : Liquid (Pale yellow) : React Violently
TiCl4		Molecular Formula Molecular Weight Boiling Point Melting Point Vapor Pressure Physical State/Color Water Reactivity	: TiCl4 : 189.69g/mol : 136.4¡É : -24.1¡É : 20¡É/9.75torr : Liquid (Colorless) : React Violently
TBTDETa		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C16H39N4Ta : 468.46g/mol : 95¡É/0.5torr : 120¡É/1.0torr : Liquid(Pale yellow) : React Violently
TBTEMTa		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C13H33N4Ta : 426.38g/mol : 95¡É/1.8torr : N/A : Liquid(Pale yellow) : React Violently