High-k for Capacitor

High-k dielectric material is required for obtaining sufficient cell capacitance because of high density and scaling down in DRAM. ZrO₂ and HfO₂ are mainly used for DRAM device below 30nm.
* High dielectric constant k value makes DRAM lose capacitance less.

Product	Structure	Property		MSDS
TEMAHf		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C12H32N4Hf : 411.89g/mol : 25¡É/0.1torr : - : Yellow Liquid : Violently react
TEMAZr		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C12H32N4Zr : 323.62g/mol : 81¡É/0.1torr : - : Liquid(Colorless to pale Yellow) : Violently react
A2HP7		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C11H23N3Zr : 288.5g/mol : 264¡É : 90¡É/0.3torr : Yellow Liquid : Slowly react
TMA		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C3H9Al : 72.09g/mol : 15°C : 125°C : 60¡É/69.3torr : Liquid (Colorless) : React Violently
TBTDEN		Molecular Formula Molecular Weight Boiling Point Physical State/Color Water Reactivity	: C16H39N4Nb : 394.446g/mol : 94¡É/0.1torr : Pale Yellow Liquid : Slowly react
Cp(Me)CpZr(OEt)2		Molecular Formula Molecular Weight Boiling Point Physical State/Color Water Reactivity	: C15H22O2Zr : 325.56g/mol : 87¡É/0.326torr : Yellow Liquid : Slowly react