Electrode Material

DRAM cell capacitor requires electrode materials having low electrical resistivity as well as good etching property. Ru and Nb have been being studied as bottom electrode while TiN has been used.

Product	Structure	Property		MSDS
Ru(EtCp)2		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C14H18Ru : 287.37g/mol : 6¡É : 90¡É/0.34torr : Liquid (Yellow) : React slowly
Ru-4		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C16H22Ru : 315.23g/mol : - : 134¡É/1.0torr : Liquid (Yellow) : React slowly
TDMATi		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C8H24N4Ti : 224.18g/mol : 225¡É : 25¡É/0.1torr : Liquid (Pale yellow) : React Violently
TiCl4		Molecular Formula Molecular Weight Boiling Point Melting Point Vapor Pressure Physical State/Color Water Reactivity	: TiCl4 : 189.69g/mol : 136.4¡É : -24.1¡É : 20¡É/9.75torr : Liquid (Colorless) : React Violently
TBTDETa		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C16H39N4Ta : 468.46g/mol : 95¡É/0.5torr : 120¡É/1.0torr : Liquid(Pale yellow) : React Violently
TBTEMTa		Molecular Formula Molecular Weight Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C13H33N4Ta : 426.38g/mol : 95¡É/1.8torr : N/A : Liquid(Pale yellow) : React Violently