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Gap Fill Materials

Semiconductor device requires dielectric materials for isolation on STI(Shallow Trench Isolation), IMD(Inter-Metal Dielectric), and PMD(Pre-Metal Dielectric). For this process CVD(Chemical Vapor Deposition) and HDP(High Density Plasma) was usually used, but it started forming void inside STI as memory density is getting high. To make uniform and void-free gap-filling, SOD(Spin on Dielectric) is used for devices below 45nm.

Gap Fill Material

Product Structure Property MSDS
PS Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: [SiH2-NH]n
: 5000~6000g/mol
: -
: -
: Colorless Liquid
: Slowly react
D2S2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H18N2Si
: 146.3g/mol
: 134¡É
: 25¡É/5.63torr
: Colorless liquid
: Violently react
TDMAS(Tri-DMAS) Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H19N3Si
: 161.3g/mol
: 145¡É
: 25¡É/7torr
: Colorless liquid
: Slowly react
TIPAS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H25N3Si
: 203.40g/mol
: 165¡É
: 25¡É/2.51torr
: Colorless liquid
: Violently react
TEMS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H25N3Si
: 203.40g/mol
: 170~171¡É
: 20¡É/1.2torr
: Colorless liquid
: Violently react