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Low Temp. SiO2/SiN
Method of manufacturing flash memory is being changed from FG(Floating Gate) to CT(Charge Trap) for device scaling below 20nm. In 2013,
CT-3D may be chosen by chipmakers to continue flash memory scaling below 1x nm node. For this process SiO2 and SiN, ALD precursors,
as a tunneling oxide(gate oxide) or blocking oxide is required to study.
Product
Structure
Property
MSDS
DIPAS
Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity