GST Materials for PRAM

PRAM(Phase-change RAM) is a kind of non-volatile random-access memory, it is one of promising memory device having high scalability, high read and write speed, and low power consumption. For those performances, phase-change materials such as GST(Ge₂Sb₂Te₅) is required.

Product	Structure	Property		MSDS
TDMAGe		Molecular Formula Molecular Weight Boiling Point Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C8H24N4Ge : 248.73g/mol : 203¡É : 14¡É : 50¡É/3torr : Liquid (Colorless) : React Violently
TEMAGe		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C12H32N4Ge : 305.05g/mol : 260¡É : 60¡É/0.52torr : Liquid (Colorless) : React Violently
TDMASb		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C6H18N3Sb : 253.81g/mol : 32-34¡É/0.45torr : 40¡É/4.9torr : Liquid (Colorless) : React Violently
DIPTe		Molecular Formula Molecular Weight Boiling Point Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C6H14Te : 213.77g/mol : 49¡É/14torr : -55¡É : 20¡É/2.57torr : Liquid (Orange) : React slowly
DTBUTe		Molecular Formula Molecular Weight Boiling Point Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C8H18Te : 241.83g/mol : 50¡É/1torr : N/A : 40¡É/1.3torr : Liquid (Pale yellow) : React slowly
SS2		Molecular Formula Molecular Weight Boiling Point Melting Point Vapor Pressure Physical State/Color Water Reactivity	: C6H18Si2Se : 225.34g/mol : 31¡É/2torr : -7¡É : N/A : Liquid (Yellow) : React Violently
BDMEDAGe		Molecular Formula Molecular Weight Boiling Point Vapor Pressure Physical State/Color Water Reactivity	: C8H20N4Ge : 244.88g/mol : 214¡É : 32¡É/0.5torr : Colorless Liquid : Slowly react