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Gap Fill Material

반도체 소자는 전기적 간섭을 막기위해 STI, IMD, PMD와 같은 Cell간, 층간 절연물질을 필요로 합니다. 절연막에 발생된 미세한 void가 Gate 간 Short를 유발하므로 선폭이 미세화될수록 절연물질의 중요성이 더욱 커지고 있습니다. 따라서, 기존의 CVD 방식으로 증착 되던 절연물질이 SOD 방식으로 Coating되고 있으며, 물질 또한 Coating 공정에 맞게 변화하고 있습니다.

Gap Fill Material

Product Structure Property MSDS
PS Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity		 : [SiH2-NH]n
: 5000~6000g/mol
: -
: -
: Colorless Liquid
: Slowly react
D2S2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity 		: C6H18N2Si
: 146.3g/mol
: 134℃
: 25℃/5.63torr
: Colorless liquid
: Violently react
TDMAS(Tri-DMAS) Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity 		: C6H19N3Si
: 161.3g/mol
: 145℃
: 25℃/7torr
: Colorless liquid
: Slowly react
TIPAS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity 		: C9H25N3Si
: 203.40g/mol
: 165℃
: 25℃/2.51torr
: Colorless liquid
: Violently react
TEMS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity 		: C9H25N3Si
: 203.40g/mol
: 170~171℃
: 20℃/1.2torr
: Colorless liquid
: Violently react